fjh1101 ? ultra low leakage diode ? 2011 fairchild semiconductor corporation www.fairchildsemi.com fjh1101 rev. a1 1 february 2011 fjh1101 ultra low leakage diode general description an ultra low leakage diode in the do-35 package. the forward voltage is typically greate r than 0.5 volts at 1.0 micro-ampere. this product is light sensitive, any damage to the body co ating will affect the reverse leakage when exposed to light. absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. electrical characteristics t a = 25c unless otherwise noted symbol parameter value units w iv working inverse voltage 15 v i f dc forward current (i f )150ma p d total power dissipation at t a = 25c linear derating factor from t a = 25c 250 1.67 mw mw/ c r ja thermal resistance junction-to-ambient 300 c/w t j operating junction temperature 175 c t stg storage temperature -55 to +200 c symbol parameter test condition min. typ. max. units b v breakdown voltage i r = 5.0 a20 v i r reverse leakage v r = 5.0v v r = 15v 5.0 15 pa pa v f forward voltage i f = 50ma 1.1 v c t diode capacitance v r = 0v, f = 1.0mhz 2.0 pf cathode band 0.200 (5.08) 0.120 (3.05) 0.022 (0.558) diameter 0.018 (0.458) typ 20 mils 0.090 (2.28) diameter 0.060 (1.53) 0.500 minimum 12.70 typ 1.000 typical forward voltages 1.0 ua - - - - - - - - - - 530 mv 10 ua - - - - - - - - - - 605 mv 100 ua - - - - - - - - - - 685 mv 1.0 ma- - - - - - - - - - 780 mv 10 ma- - - - - - - - - - 895 mv 50 ma- - - - - - - - - - 995 mv 100 ma- - - - - - - - - - 1.07 v logo h11 01 xy * xy = 6 weeks marking date code, x = last digit of the calendar year (alpha), y = 6 weeks numeric code.
fjh1101 ? ultra low leakage diode ? 2011 fairchild semiconductor corporation www.fairchildsemi.com fjh1101 rev. a1 2 physical dimension do-35 0 , 1 ; 1 2 7 ( 6 8 1 / ( 6 6 2 7 + ( 5 : , 6 ( 6 3 ( & |